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LEEM-10 Experimental Apparatus of PN Junction Characteristics

Lus piav qhia luv luv:

Nqis qauv


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Khoom cim npe

Kev sim

1. Nyob rau tib qhov kub thiab txias, ntsuas lub pem hauv ntej volt-ampere yam ntxwv ntawm PN hlws ris thiab xam Boltzmann tas li;

2. Lub pem hauv ntej tam sim no kuv tseem tsis tau hloov, VT nkhaus ntawm lub zog pem hauv ntej ntawm PN hlws ris yog mapped, rhiab heev yog xam, thiab band sib txawv ntawm qhov ntsuas PN junction khoom yog kwv yees;

3. Daim ntawv thov kev sim: siv PN kev sib tshuam los ntsuas qhov ntsuas kub tsis paub;

4. Kev sim tshiab: Raws li cov ntaub ntawv sim, kwv yees qhov rov qab saturation tam sim no yog ntawm PN junction.

5. Kev tshawb nrhiav kev sim: Saib xyuas qhov cuam tshuam ntawm qhov loj ntawm cov khoom sib xyaw tam sim no.

 

Lub ntsiab technical parameters

1. Ntau yam ntawm PN junctions nrog ntim, nrog rau cov raj silicon, germanium hlab, NPN transistors, thiab lwm yam;

2. Cov zis tam sim no yog 10nA ~ 1mA, kho tau hauv 4 ntu, kev kho kom zoo: yam tsawg kawg 1nA, tsav tsheb voltage

Txog 5V, hla cov lus ≤ 1 lo lus / min;

3. Dedicated ultra-siab tsis kam 4-1 / 2 tus lej digital voltmeter, ob theem ntawm kev tiv thaiv sab hauv: 10MΩ, ultra-siab tsis kam (ntau dua 1GΩ), ntsuas ntau yam: 0~2V, daws teeb meem: 0.1mV;Kev ntsuas tsis meej: 0.1% ± 2 lo lus.

4. Kev ntsuas kub: chav ntsuas kub ~ 99 ℃, ntsuas kub digital: 0 ~ 100 ℃, daws teeb meem 0.1 ℃;

5. Nrog rau lub tshuab cua sov, Dewar lub raj mis thiab lub raj mis.


  • Yav dhau los:
  • Tom ntej:

  • Sau koj cov lus ntawm no thiab xa tuaj rau peb