LPT-7 Diode-Pumped Solid-State Laser Demonstrator
Specifications
Semiconductor Laser | |
CW tso zis zog | ≤ 500 mW |
Polarization | TE |
Center Wavelength | 808 ± 10 nm |
Kev khiav hauj lwm qhov kub thiab txias | 10 ~ 40 ° C |
Tsav tam sim no | 0 ~ 500mA |
Nd: YVO4Crystal | |
Nd Doping Concentration | 0.1 ~ 3 atm% |
Dimension | 3 × 3 × 1 mm |
Flatness | < λ/10 @ 632.8 nm |
Txheej | AR@1064 nm, R <0.1%;808 = "" t=""> 90% |
KTP Crystal | |
Transmissive Wavelength Range | 0.35 ~ 4.5 µm |
Electro-Optic Coefficient | r33= 36 pm/V |
Dimension | 2 × 2 × 5 mm |
Daim iav tso zis | |
Txoj kab uas hla | Φ 6 mm |
Radius ntawm Curvature | 50 mm |
Nws-Ne Alignment Laser | ≤ 1 mW @ 632.8 nm |
IR Saib daim npav | Spectral teb ntau: 0.7 ~ 1.6 µm |
Laser Safety Goggles | OD = 4 + rau 808 nm thiab 1064 nm |
Optical Fais Fab Meter | 2 μW ~ 200 mW, 6 teev |
QHOV TSEEB
Tsis muaj. | Kev piav qhia | Parameter | Qty |
1 | Optical Rail | nrog lub hauv paus thiab plua plav npog, He-Ne laser fais fab mov yog nruab rau hauv lub hauv paus | 1 |
2 | Nws-Ne Laser Holder | nrog tus cab kuj | 1 |
3 | Alignment Aperture | f1mm qhov nrog cov cab kuj | 1 |
4 | Lim | f10 mm aperture nrog cov cab kuj | 1 |
5 | Daim iav tso zis | BK7, f6 mm R = 50 mmwith 4-axis adjustable tuav thiab nqa | 1 |
6 | KTP Crystal | 2 × 2 × 5 mmwith 2-axis adjustable tuav thiab nqa | 1 |
7 | Nd: YVO4 Crystal | 3 × 3 × 1 mmwith 2-axis adjustable tuav thiab nqa | 1 |
8 | 808nm LD laser diode | ≤ 500 mWwith 4-axis adjustable tuav thiab nqa | 1 |
9 | Detector Head Holder | nrog tus cab kuj | 1 |
10 | Infrared Saib Card | 750 ~ 1600 nm | 1 |
11 | Nws-Ne Laser Tube | 1.5mW@632.8 nm | 1 |
12 | Optical Fais Fab Meter | 2 wm w~200mW (6 ntau yam) | 1 |
13 | Detector Head | nrog cover thiab post | 1 |
14 | LD tam sim no Controller | 0 ~ 500mA | 1 |
15 | Hwj chim Cord | 3 | |
16 | Phau ntawv qhia | V1.0 | 1 |
Sau koj cov lus ntawm no thiab xa tuaj rau peb